BB101MAU-UR

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BB101MAU-UR datasheet

• Маркировка
  BB101MAU-UR
• Производитель
  Renesas Electronics
• Описание
  Renesas Electronics BB101MAU-UR Mfr Package Description: MPAK-4 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: SOURCE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.1500 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DUAL GATE, ENHANCEMENT Transistor Type: RF SMALL SIGNAL Power Gain-Min (Gp): 16 dB Drain Current-Max (ID): 0.0250 A Highest Frequency Band: ULTRA HIGH FREQUENCY BAND Feedback Cap-Max (Crss): 0.0300 pF DS Breakdown Voltage-Min: 6 V
• Количество страниц
  9 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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